Oxygen-free copper with grain growth suppression
MOFC™-GC
C10810
- Thermal management
MOFC-GC is an oxygen-free copper with world-class crystal grain growth inhibition performance, contributing to improved quality and enhanced process stability in a wide range of electronic components and power modules.
Positioning map
While maintaining electrical and thermal conductivity comparable to conventional oxygen-free copper (C10200), MOFC-GC suppresses crystal grain growth at elevated temperatures and achieves a fine and uniform crystal structure even after high-temperature processing.
Main features
- MOFC-GC offers electrical and thermal conductivity comparable to that of conventional oxygen-free copper.
- MOFC-GC suppresses crystal grain growth at high temperatures and maintains a fine and uniform crystal structure even after heat treatment at 1000℃.
Benefits of MOFC-GC
The following benefits can be expected from using MOFC-GC as the material for ceramic substrates such as AMB substrates.
- Improved optical recognizability
- Reduced surface roughness (improved smoothness and reduced variation)
- Improved plating appearance
- Improved ultrasonic image inspection quality of the brazing boundary between the copper circuit layer and the ceramic
- Stabilized substrate warpage
- Improved thermal cycle reliability
- Resolves the problem of insufficient wire bonding strength (when using small diameter wires, etc.)
- Reduced variation in semiconductor device soldering and sintered material bonding
Chemical composition
（Weight %）
| Cu |
|---|
| 99.95% Min. |
Technical Data
Physical properties
（Weight %）
| Property | Representative Value |
|---|---|
| Specific Gravity | 8.94 |
| Coefficient of Thermal Expansion ×10-6/K(293～573℃) |
17.6 |
| Thermal Conductivity (W/(m・K)：293K) |
391 |
| Volume Resistivity (μΩm：293K) |
0.017 |
| Electrical Conductivity (%IACS:293K) |
101 |
| Modulus of Elasticity kN/mm² |
119 |
| Poisson’s Ratio (293K) |
0.30 |
Mechanical properties
| Temper | Typical Values | |
|---|---|---|
| 1/4H | 1/4H t:0.8mm |
|
| Tensile Strength (N/mm²) |
215-275 | 245 |
| Elongation (%) |
25 Min. | 36 |
| Vickers Hardness (HV) |
- | 71 |
Grain growth suppression capability
It has been confirmed that MOFC-GC suppresses crystal grain growth even during heat treatment at 1000℃. With its superior crystal grain growth inhibition performance, MOFC-GC maintains a fine and uniform crystal structure even after AMB (Active Metal Bonding).
Grain size after heat treatment in air atmosphere
Heating
rate: 10℃/min
Hold time: 1h
Microstructure after heat
treatment in air atmosphere
Heating rate: 10℃/min
Hold time: 1h
Microstructure of our company prototype AMB substrate